ISSI, Integrated Silicon Solution Inc IS62WV25616DALL-55B2I
| Parameters | |
|---|---|
| Mfr | ISSI, Integrated Silicon Solution Inc |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 4Mbit |
| Memory Organization | 256K x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 55ns |
| Access Time | 55 ns |
| Voltage - Supply | 1.65V ~ 2.2V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-TFBGA (6x8) |
| Base Product Number | IS62WV25616 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | OBSOLETE |
| Other Names | 706-IS62WV25616DALL-55B2I |
| Standard Package | 480 |
SRAM - Asynchronous Memory IC 4Mbit Parallel 55 ns 48-TFBGA (6x8)
