ISSI, Integrated Silicon Solution Inc IS64WV51216EEBLL-10CT2LA3
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| Parameters | |
|---|---|
| Mfr | ISSI, Integrated Silicon Solution Inc |
| Series | Automotive, AEC-Q100 |
| Package | Tray |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 8Mbit |
| Memory Organization | 512K x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 10ns |
| Access Time | 10 ns |
| Voltage - Supply | 2.4V ~ 3.6V |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Other Names | 706-IS64WV51216EEBLL-10CT2LA3 |
| Standard Package | 96 |
SRAM - Asynchronous Memory IC 8Mbit Parallel 10 ns 48-TSOP I
