Kaga FEI America, Inc. MB85R8M2TAFN-G-JAE2
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| Parameters | |
|---|---|
| Technology | FRAM (Ferroelectric RAM) |
| Memory Size | 8Mbit |
| Memory Organization | 1M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 120ns |
| Access Time | 120 ns |
| Voltage - Supply | 1.8V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 44-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 44-TSOP |
| Base Product Number | MB85R8 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| ECCN | EAR99 |
| HTSUS | 8542.32.0071 |
| Other Names | 865-MB85R8M2TAFN-G-JAE2 |
| Standard Package | 126 |
| Mfr | Kaga FEI America, Inc. |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FRAM |
FRAM (Ferroelectric RAM) Memory IC 8Mbit Parallel 120 ns 44-TSOP
