Micron Technology Inc. MT29E4T08EYHBBG9-3:B
| Parameters | |
|---|---|
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 4Tbit |
| Memory Organization | 512G x 8 |
| Memory Interface | Parallel |
| Clock Frequency | 333 MHz |
| Write Cycle Time - Word, Page | - |
| Voltage - Supply | 2.5V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
| Base Product Number | MT29E4T08 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0071 |
| Standard Package | 980 |
FLASH - NAND Memory IC 4Tbit Parallel 333 MHz
