Micron Technology Inc. MT29F4G08ABBEAM70M3WC1
| Parameters | |
|---|---|
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 4Gbit |
| Memory Organization | 512M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | - |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
| Base Product Number | MT29F4G08 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0071 |
| Standard Package | 1 |
FLASH - NAND Memory IC 4Gbit Parallel Die
