Micron Technology Inc. MT29RZ4B2DZZHGSK-18 W.80E
| Parameters | |
|---|---|
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Non-Volatile, Volatile |
| Memory Format | FLASH, RAM |
| Technology | FLASH - NAND, DRAM - LPDDR2 |
| Memory Size | 4Gbit (NAND), 2Gbit (LPDDR2) |
| Memory Organization | 512M x 8 (NAND), 64M x 32 (LPDDR2) |
| Memory Interface | Parallel |
| Clock Frequency | 533 MHz |
| Write Cycle Time - Word, Page | - |
| Voltage - Supply | 1.8V |
| Operating Temperature | -25°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 162-VFBGA |
| Supplier Device Package | 162-VFBGA (11.5x13) |
| Base Product Number | MT29RZ4B2 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0071 |
| Standard Package | 1,000 |
FLASH - NAND, DRAM - LPDDR2 Memory IC 4Gbit (NAND), 2Gbit (LPDDR2) Parallel 533 MHz 162-VFBGA (11.5x13)
