Micron Technology Inc. MT29RZ4C8DZZMHAN-18W.80Y
| Parameters | |
|---|---|
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Non-Volatile, Volatile |
| Memory Format | FLASH, RAM |
| Technology | FLASH - NAND, DRAM - LPDDR2 |
| Memory Size | 4Gbit (NAND), 4Gbit (LPDDR2) |
| Memory Organization | 256M x 16 (NAND), 128M x 32 (LPDDR2) |
| Memory Interface | Parallel |
| Clock Frequency | 533 MHz |
| Write Cycle Time - Word, Page | - |
| Voltage - Supply | 1.8V |
| Operating Temperature | -25°C ~ 85°C (TA) |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
| Base Product Number | MT29RZ4C8 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | OBSOLETE |
| HTSUS | 0000.00.0000 |
| Standard Package | 980 |
FLASH - NAND, DRAM - LPDDR2 Memory IC 4Gbit (NAND), 4Gbit (LPDDR2) Parallel 533 MHz
