Micron Technology Inc. MT41J512M4HX-15E:D
| Parameters | |
|---|---|
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3 |
| Memory Size | 2Gbit |
| Memory Organization | 512M x 4 |
| Memory Interface | Parallel |
| Clock Frequency | 667 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 13.5 ns |
| Voltage - Supply | 1.425V ~ 1.575V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 78-TFBGA |
| Supplier Device Package | 78-FBGA (9x11.5) |
| Base Product Number | MT41J512M4 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0036 |
| Standard Package | 1,000 |
SDRAM - DDR3 Memory IC 2Gbit Parallel 667 MHz 13.5 ns 78-FBGA (9x11.5)
