Micron Technology Inc. MT47H512M8WTR-25E:C
| Parameters | |
|---|---|
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 4Gbit |
| Memory Organization | 512M x 8 |
| Memory Interface | Parallel |
| Clock Frequency | 400 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 400 ps |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 63-TFBGA |
| Supplier Device Package | 63-FBGA (9x11.5) |
| Base Product Number | MT47H512M8 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0036 |
| Standard Package | 1,320 |
SDRAM - DDR2 Memory IC 4Gbit Parallel 400 MHz 400 ps 63-FBGA (9x11.5)
