Micron Technology Inc. MT53E512M32D1ZW-046BAIT:B
| Parameters | |
|---|---|
| Mfr | Micron Technology Inc. |
| Series | Automotive, AEC-Q100 |
| Package | Tray |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4X |
| Memory Size | 16Gbit |
| Memory Organization | 512M x 32 |
| Memory Interface | Parallel |
| Clock Frequency | 2.133 GHz |
| Write Cycle Time - Word, Page | 18ns |
| Access Time | 3.5 ns |
| Voltage - Supply | 1.06V ~ 1.17V |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 200-TFBGA |
| Supplier Device Package | 200-TFBGA (10x14.5) |
| Other Names | 557-MT53E512M32D1ZW-046BAIT:B |
| Standard Package | 1 |
SDRAM - Mobile LPDDR4X Memory IC 16Gbit Parallel 2.133 GHz 3.5 ns 200-TFBGA (10x14.5)
