Micron Technology Inc. MT54V1MH18EF-7.5
| Parameters | |
|---|---|
| Mfr | Micron Technology Inc. |
| Series | QDR® |
| Package | Bulk |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous |
| Memory Size | 18Mbit |
| Memory Organization | 1M x 18 |
| Memory Interface | HSTL |
| Clock Frequency | 133 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 3 ns |
| Voltage - Supply | 2.4V ~ 2.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 165-TBGA |
| Supplier Device Package | 165-FBGA (13x15) |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 1 |
SRAM - Synchronous Memory IC 18Mbit HSTL 133 MHz 3 ns 165-FBGA (13x15)
