Micron Technology Inc. MT54V512H18EF-6

MT54V512H18EF-6


  • Manufacturer: Micron Technology Inc.
  • CONEVO NO: MT54V512H18EF-6
  • Package: 165-TBGA
  • Datasheet: PDF
  • Stock: In stock
  • Description: MT54V512H18EF-6(Kg)

Details

Tags

Parameters
Mfr Micron Technology Inc.
Series QDR™
Package Bulk
Product Status Active
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Synchronous
Memory Size 9Mbit
Memory Organization 512K x 18
Memory Interface HSTL
Clock Frequency 167 MHz
Write Cycle Time - Word, Page -
Access Time 2.5 ns
Voltage - Supply 2.4V ~ 2.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 165-TBGA
Supplier Device Package 165-FBGA (13x15)
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Standard Package 1
SRAM - Synchronous Memory IC 9Mbit HSTL 167 MHz 2.5 ns 165-FBGA (13x15)
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