Micron Technology Inc. MT54V512H18EF-6
| Parameters | |
|---|---|
| Mfr | Micron Technology Inc. |
| Series | QDR™ |
| Package | Bulk |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous |
| Memory Size | 9Mbit |
| Memory Organization | 512K x 18 |
| Memory Interface | HSTL |
| Clock Frequency | 167 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 2.5 ns |
| Voltage - Supply | 2.4V ~ 2.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 165-TBGA |
| Supplier Device Package | 165-FBGA (13x15) |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 1 |
SRAM - Synchronous Memory IC 9Mbit HSTL 167 MHz 2.5 ns 165-FBGA (13x15)
