Micron Technology Inc. MT54W512H36JF-6
| Parameters | |
|---|---|
| Mfr | Micron Technology Inc. |
| Series | QDR™ |
| Package | Bulk |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Quad Port, Synchronous |
| Memory Size | 18Mbit |
| Memory Organization | 512K x 36 |
| Memory Interface | Parallel |
| Clock Frequency | 167 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 6 ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 165-TBGA |
| Supplier Device Package | 165-FBGA (13x15) |
| Base Product Number | MT54W512H |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 1 |
SRAM - Quad Port, Synchronous Memory IC 18Mbit Parallel 167 MHz 6 ns 165-FBGA (13x15)
