National Semiconductor 93425DMQB40
| Parameters | |
|---|---|
| Mfr | National Semiconductor |
| Series | 93425DMQB40 |
| Package | Bulk |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 1Kbit |
| Memory Organization | 1K x 1 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 20ns |
| Access Time | 30 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | -55°C ~ 125°C (TC) |
| Mounting Type | Through Hole |
| Package / Case | 16-CDIP (0.300", 7.62mm) |
| Supplier Device Package | 16-CDIP |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A001A2C |
| HTSUS | 8542.32.0041 |
| Standard Package | 1 |
SRAM - Asynchronous Memory IC 1Kbit Parallel 30 ns 16-CDIP
