Renesas Electronics America Inc 71256L35DB
| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 256Kbit |
| Memory Organization | 32K x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 35ns |
| Access Time | 35 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | -55°C ~ 125°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 28-CDIP (0.600", 15.24mm) |
| Supplier Device Package | 28-CDIP |
| Base Product Number | 71256L |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | 3A001A2C |
| HTSUS | 8542.32.0041 |
| Standard Package | 13 |
SRAM - Asynchronous Memory IC 256Kbit Parallel 35 ns 28-CDIP
