Renesas Electronics America Inc 71V416L10BE
| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 4Mbit |
| Memory Organization | 256K x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 10ns |
| Access Time | 10 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-CABGA (9x9) |
| Base Product Number | 71V416L |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 4 (72 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 250 |
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-CABGA (9x9)
