Renesas Electronics America Inc HIP2211FBZ
| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Driven Configuration | Half-Bridge |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Voltage - Supply | 6V ~ 18V |
| Logic Voltage - VIL, VIH | 1.47V, 1.84V |
| Current - Peak Output (Source, Sink) | 3A, 4A |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 115 V |
| Rise / Fall Time (Typ) | 20ns, 20ns |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Other Names | 20-HIP2211FBZ |
| Standard Package | 1 |
Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
