Renesas Electronics America Inc R1EV58064BDARBI#B2
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| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | R1EV58064BxxR |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | EEPROM |
| Technology | EEPROM |
| Memory Size | 64Kbit |
| Memory Organization | 8K x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 10ms |
| Access Time | 100 ns |
| Voltage - Supply | 2.7V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 28-DIP (0.600", 15.24mm) |
| Supplier Device Package | 28-DIP |
| Base Product Number | R1EV58064 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| ECCN | EAR99 |
| HTSUS | 8542.32.0051 |
| Other Names | 559-R1EV58064BDARBI#B2 |
| Standard Package | 25 |
EEPROM Memory IC 64Kbit Parallel 100 ns 28-DIP
