Renesas Electronics America Inc R1RW0416DGE-2LR#B1

R1RW0416DGE-2LR#B1


  • Manufacturer: Renesas Electronics America Inc
  • CONEVO NO: R1RW0416DGE-2LR#B1
  • Package: 44-BSOJ (0.400", 10.16mm Width)
  • Datasheet: -
  • Stock: In stock
  • Description: R1RW0416DGE-2LR#B1(Kg)

Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Other Names 559-R1RW0416DGE-2LR#B1
Standard Package 18
Mfr Renesas Electronics America Inc
Series -
Package Tray
Product Status Active
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 4Mbit
Memory Organization 256K x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 12ns
Access Time 12 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package 44-SOJ
RoHS Status ROHS3 Compliant
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-SOJ
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