Renesas Electronics America Inc R1RW0416DGE-2LR#B1
| Parameters | |
|---|---|
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Other Names | 559-R1RW0416DGE-2LR#B1 |
| Standard Package | 18 |
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 4Mbit |
| Memory Organization | 256K x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 12ns |
| Access Time | 12 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 44-BSOJ (0.400", 10.16mm Width) |
| Supplier Device Package | 44-SOJ |
| RoHS Status | ROHS3 Compliant |
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-SOJ
