Renesas Electronics America Inc R1WV6416RBG-7SI#B0
| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 64Mbit |
| Memory Organization | 4M x 16, 8M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 70ns |
| Access Time | 70 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-TFBGA (8.5x11) |
| Base Product Number | R1WV6416 |
| RoHS Status | Not applicable |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| Standard Package | 1 |
SRAM - Asynchronous Memory IC 64Mbit Parallel 70 ns 48-TFBGA (8.5x11)
