Renesas Electronics America Inc UPD44325084BF5-E40-FQ1
| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, QDR II |
| Memory Size | 36Mbit |
| Memory Organization | 4M x 8 |
| Memory Interface | Parallel |
| Clock Frequency | 250 MHz |
| Write Cycle Time - Word, Page | 4ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 165-FBGA |
| Supplier Device Package | 165-FBGA (15x17) |
| Base Product Number | UPD44325084 |
| RoHS Status | RoHS non-compliant |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 1 |
SRAM - Synchronous, QDR II Memory IC 36Mbit Parallel 250 MHz 165-FBGA (15x17)
