Renesas Electronics America Inc UPD44647366AF5-E25-FQ1
| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, QDR II+ |
| Memory Size | 72Mbit |
| Memory Organization | 2M x 36 |
| Memory Interface | Parallel |
| Clock Frequency | 400 MHz |
| Write Cycle Time - Word, Page | 2.5ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 165-LBGA |
| Supplier Device Package | 165-PBGA (13x15) |
| Base Product Number | UPD44647366 |
| RoHS Status | Not applicable |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 1 |
SRAM - Synchronous, QDR II+ Memory IC 72Mbit Parallel 400 MHz 165-PBGA (13x15)
