Rohm Semiconductor BR25G512FVT-3GE2

BR25G512FVT-3GE2


  • Manufacturer: Rohm Semiconductor
  • CONEVO NO: BR25G512FVT-3GE2
  • Package: 8-TSSOP (0.173", 4.40mm Width)
  • Datasheet: PDF
  • Stock: In stock
  • Description: BR25G512FVT-3GE2(Kg)

Details

Tags

Parameters
Mfr Rohm Semiconductor
Series -
Package Tape & Reel (TR)
Product Status Active
Memory Type Non-Volatile
Memory Format EEPROM
Technology EEPROM
Memory Size 512Kbit
Memory Organization 64K x 8
Memory Interface SPI
Clock Frequency 10 MHz
Write Cycle Time - Word, Page 5ms
Voltage - Supply 1.8V ~ 5.5V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-TSSOP-B
Base Product Number BR25G512
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN 3A991B1B2
HTSUS 8542.32.0051
Standard Package 3,000
EEPROM Memory IC 512Kbit SPI 10 MHz 8-TSSOP-B
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