Rohm Semiconductor BR25G512FVT-3GE2
| Parameters | |
|---|---|
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | EEPROM |
| Technology | EEPROM |
| Memory Size | 512Kbit |
| Memory Organization | 64K x 8 |
| Memory Interface | SPI |
| Clock Frequency | 10 MHz |
| Write Cycle Time - Word, Page | 5ms |
| Voltage - Supply | 1.8V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package | 8-TSSOP-B |
| Base Product Number | BR25G512 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B1B2 |
| HTSUS | 8542.32.0051 |
| Standard Package | 3,000 |
EEPROM Memory IC 512Kbit SPI 10 MHz 8-TSSOP-B
