Texas Instruments BQ4014YMB-120
| Parameters | |
|---|---|
| Mfr | Texas Instruments |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 2Mbit |
| Memory Organization | 256K x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 120ns |
| Access Time | 120 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 32-DIP Module (0.61", 15.49mm) |
| Supplier Device Package | 32-DIP Module (18.42x52.96) |
| Base Product Number | BQ4014 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0041 |
| Standard Package | 15 |
NVSRAM (Non-Volatile SRAM) Memory IC 2Mbit Parallel 120 ns 32-DIP Module (18.42x52.96)
