Vishay Siliconix DG636EN-T1-E4
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| Parameters | |
|---|---|
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Obsolete |
| Switch Circuit | SPDT |
| Multiplexer/Demultiplexer Circuit | 2:1 |
| Number of Circuits | 2 |
| On-State Resistance (Max) | 115Ohm |
| Channel-to-Channel Matching (ΔRon) | 1Ohm |
| Voltage - Supply, Single (V+) | 2.7V ~ 12V |
| Voltage - Supply, Dual (V±) | ±2.7V ~ 5V |
| Switch Time (Ton, Toff) (Max) | 60ns, 52ns |
| -3db Bandwidth | 610MHz |
| Charge Injection | 0.1pC |
| Channel Capacitance (CS(off), CD(off)) | 2.1pF, 4.2pF |
| Current - Leakage (IS(off)) (Max) | 100pA |
| Crosstalk | -88dB @ 10MHz |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 16-WFQFN |
| Supplier Device Package | 16-miniQFN (1.8x2.6) |
| Base Product Number | DG636 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8542.39.0001 |
| Standard Package | 3,000 |
2 Circuit IC Switch 2:1 115Ohm 16-miniQFN (1.8x2.6)
